INFINEON BSM50GX120DN2 IGBT Module

The IGBT is a semiconductor device with four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS) gate structure without regenerative action. This mode of operation was first proposed by Yamagami in his Japanese patent S47-21739, which was filed in 1968. This mode of operation was first experimentally discovered by B. Jayant Baliga in vertical device structures with a V-groove gate region and reported in the literature in 1979. The device structure was referred to as a ‘V-groove MOSFET device with the drain region replaced by a p-type Anode Region’ in this paper and subsequently as the insulated-gate rectifier (IGR),the insulated-gate transistor (IGT), the conductivity-modulated field-effect transistor (COMFET) and "bipolar-mode MOSFET" INFINEON BSM50GX120DN2